2" InSb wafer (N type, undoped)
- Size: 49 mm dia x 0.5mm thick
- Orientation <111> /-0.5o with two reference flats
- Polishing: one side polished ( back side etched )
- Packing: Sealed under nitrogen with single wafer container in 1000 class clean room
Properties
- Growth method LEC
- Orientation (111)A /- 0.5o
- Orientation Flat
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <1E14 @77K
- Mobility >2E5 cm^2/V.s
- EPD <500 cm^-2
